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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5075 DESCRIPTION With TO-3PML package High breakdown voltage High speed switching APPLICATIONS Color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 800 6 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 3.5 10 50 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD5075 SYMBOL MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A 8.0 V VBEsat IEBO Base-emitter saturation voltage IC=2.5A;IB=0.8A VEB=5V; IC=0 1.5 V Emitter cut-off current 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 |I A hFE DC current gain IC=0.5 A ; VCE=5V 8 fT Transition frequency IC=0.5 A ; VCE=10V IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7| 3 MHz tf Fall time 0.4 |I s TOR NDU ICO E SEM ANG INCH 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD5075 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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